TP65H050 Series
Manufacturer: Renesas Electronics Corporation
EVAL BOARD FOR TP65H050G4WS
| Part | Regulator Topology | Supplied Contents | Board Type | Frequency - Switching | Main Purpose | Voltage - Input | Outputs and Type | Outputs and Type | Power - Output | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Package / Case | Supplier Device Package | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Contents |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | Full-Bridge | Board(s) | Fully Populated | 50 kHz | DC/AC Inverter | 400 VDC | 1 | Non-Isolated | 3 kW | |||||||||||||||||
Renesas Electronics Corporation | N-Channel | GaNFET (Gallium Nitride) | 34 A | 4.8 V | 60 mOhm | 119 W | 1000 pF | 20 V | 150 °C | -55 °C | 24 nC | Through Hole | TO-247-3 | TO-247-3 | 650 V | 10 V | ||||||||||
Renesas Electronics Corporation | Full-Bridge | 50 kHz | DC/AC Inverter | 400 VDC | 1 Non-Isolated Output | 3 kW | Board(s) | |||||||||||||||||||
Renesas Electronics Corporation | N-Channel | GaNFET (Gallium Nitride) | 34 A | 4.8 V | 60 mOhm | 119 W | 1000 pF | 20 V | 150 °C | -55 °C | 24 nC | Through Hole | TO-247-3 | TO-247-3 | 650 V | 10 V |