Specification	FDB8030L

Current - Continuous Drain (Id) @ 25°C	80 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	170 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-65 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	187 W
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

FDB8030L Series

N-Channel PowerTrench® MOSFET, Logic Level, 30V, 80A , 4.5mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case
ON Semiconductor FDB8030L	4.5 V 10 V	30 V	187 W	N-Channel	3.5 mOhm	TO-263 (D2PAK)	2 V	Surface Mount	MOSFET (Metal Oxide)	170 nC	80 A	20 V	175 ░C	-65 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDB8030L Series

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.These MOSFETS feature faster switching and lower gate charge than other MOSFETS with comparable RDS(on)specifications.The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.