FDB8030L Series

N-Channel PowerTrench® MOSFET, Logic Level, 30V, 80A , 4.5mΩ

Catalog

N-Channel PowerTrench® MOSFET, Logic Level, 30V, 80A , 4.5mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case
ON Semiconductor FDB8030L	4.5 V 10 V	30 V	187 W	N-Channel	3.5 mOhm	TO-263 (D2PAK)	2 V	Surface Mount	MOSFET (Metal Oxide)	170 nC	80 A	20 V	175 ░C	-65 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Catalog

N-Channel PowerTrench® MOSFET, Logic Level, 30V, 80A , 4.5mΩ

Key Features

• 80A, 30 V

• RDS(ON)= 0.0035 Ω@ VGS=10 V

• RDS(ON)= 0.0045 Ω @ VGS= 4.5 V

• Critical DC electrical parameters specified atelevated temperature

• Rugged internal source-drain diode can eliminate theneed for an external Zener diode transientsuppressor

• High performance trench technology for extremelylow RDS(ON)

Description

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.These MOSFETS feature faster switching and lower gate charge than other MOSFETS with comparable RDS(on)specifications.The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.