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6-UDFN_517AU
Discrete Semiconductor Products

NTLUS3C18PZTBG

Obsolete
ON Semiconductor

SINGLE P-CHANNEL POWER MOSFET -12V, -7A, 24MΩ

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6-UDFN_517AU
Discrete Semiconductor Products

NTLUS3C18PZTBG

Obsolete
ON Semiconductor

SINGLE P-CHANNEL POWER MOSFET -12V, -7A, 24MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationNTLUS3C18PZTBG
Current - Continuous Drain (Id) @ 25°C4.4 A
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs15.8 nC
Input Capacitance (Ciss) (Max) @ Vds1570 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-PowerUFDFN
Power Dissipation (Max)660 mW
Rds On (Max) @ Id, Vgs24 mOhm
Supplier Device Package6-UDFN (1.6x1.6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

NTLUS3A18PZ Series

Power MOSFET −20 V, −5.0 A, µCool™ Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package