
Discrete Semiconductor Products
NTLUS3A18PZTBG
ObsoleteON Semiconductor
SINGLE P-CHANNEL POWER MOSFET WITH ESD PROTECTION -20V -8.2A 18MΩ

Discrete Semiconductor Products
NTLUS3A18PZTBG
ObsoleteON Semiconductor
SINGLE P-CHANNEL POWER MOSFET WITH ESD PROTECTION -20V -8.2A 18MΩ
Technical Specifications
Parameters and characteristics for this part
| Specification | NTLUS3A18PZTBG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.1 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 28 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2240 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Power Dissipation (Max) | 700 mW |
| Rds On (Max) @ Id, Vgs | 18 mOhm |
| Supplier Device Package | 6-UDFN (2x2) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NTLUS3A18PZ Series
Power MOSFET −20 V, −5.0 A, µCool™ Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
Documents
Technical documentation and resources