Specification	FQPF6N80C

Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1310 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	51 W
Rds On (Max) @ Id, Vgs	2.5 Ohm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQPF6N80C Series

Power MOSFET, N-Channel, QFET®, 800 V, 5.5 A, 2.5 Ω, TO-220F

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [x]	Rds On (Max) @ Id, Vgs [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]
ON Semiconductor FQPF6N70	10 V	5 V	30 V	MOSFET (Metal Oxide)	40 nC	700 V	1400 pF	-55 °C	150 °C	TO-220F-3	3.5 A	Through Hole	TO-220-3 Full Pack	48 W	N-Channel
ON Semiconductor FQPF6N40CT	10 V	4 V	30 V	MOSFET (Metal Oxide)		400 V	625 pF	-55 °C	150 °C	TO-220F-3	6 A	Through Hole	TO-220-3 Full Pack	38 W	N-Channel	20 nC	1 Ohm
ON Semiconductor FQPF6N70	10 V	5 V	30 V	MOSFET (Metal Oxide)	40 nC	700 V	1400 pF	-55 °C	150 °C	TO-220F-3	3.5 A	Through Hole	TO-220-3 Full Pack	48 W	N-Channel
ON Semiconductor FQPF6P25	10 V	5 V	30 V	MOSFET (Metal Oxide)	27 nC	250 V	780 pF	-55 °C	150 °C	TO-220F-3	4.2 A	Through Hole	TO-220-3 Full Pack	45 W	P-Channel			1.1 Ohm
ON Semiconductor FQPF6N80C	10 V	5 V	30 V	MOSFET (Metal Oxide)		800 V		-55 °C	150 °C	TO-220F-3	5.5 A	Through Hole	TO-220-3 Full Pack	51 W	N-Channel			2.5 Ohm	30 nC	1310 pF
ON Semiconductor FQPF630	10 V	4 V	25 V	MOSFET (Metal Oxide)	25 nC	200 V	550 pF	-55 °C	150 °C	TO-220F-3	6.3 A	Through Hole	TO-220-3 Full Pack	38 W	N-Channel			400 mOhm
ON Semiconductor FQPF6N90C	10 V	5 V	30 V	MOSFET (Metal Oxide)	40 nC	900 V	1770 pF	-55 °C	150 °C	TO-220F-3	6 A	Through Hole	TO-220-3 Full Pack		N-Channel			2.3 Ohm			56 W
ON Semiconductor FQPF630	10 V	4 V	25 V	MOSFET (Metal Oxide)	25 nC	200 V	550 pF	-55 °C	150 °C	TO-220F-3	6.3 A	Through Hole	TO-220-3 Full Pack	38 W	N-Channel			400 mOhm
ON Semiconductor FQPF6N25	10 V	5 V	30 V	MOSFET (Metal Oxide)	8.5 nC	250 V		-55 °C	150 °C	TO-220F-3	4 A	Through Hole	TO-220-3 Full Pack		N-Channel		1 Ohm			300 pF	37 W
ON Semiconductor FQPF6N40C	10 V	4 V	30 V	MOSFET (Metal Oxide)		400 V	625 pF	-55 °C	150 °C	TO-220F-3	6 A	Through Hole	TO-220-3 Full Pack	38 W	N-Channel	20 nC	1 Ohm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 2.42
		10	$ 2.36
		50	$ 1.33
Digikey	Tube	1	$ 3.05
		10	$ 1.98
		100	$ 1.37

Description

General part information

FQPF6N80C Series

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..