
Discrete Semiconductor Products
NVMFD5853NT1G
ObsoleteON Semiconductor
DUAL N-CHANNEL POWER MOSFET 40V, 53A, 10MΩ

Discrete Semiconductor Products
NVMFD5853NT1G
ObsoleteON Semiconductor
DUAL N-CHANNEL POWER MOSFET 40V, 53A, 10MΩ
Technical Specifications
Parameters and characteristics for this part
| Specification | NVMFD5853NT1G |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 12 A |
| Drain to Source Voltage (Vdss) | 40 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1225 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power - Max [Max] | 3.1 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 10 mOhm |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NVMFD5853NL Series
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Documents
Technical documentation and resources