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8-Power TDFN
Discrete Semiconductor Products

NVMFD5853NT1G

Obsolete
ON Semiconductor

DUAL N-CHANNEL POWER MOSFET 40V, 53A, 10MΩ

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8-Power TDFN
Discrete Semiconductor Products

NVMFD5853NT1G

Obsolete
ON Semiconductor

DUAL N-CHANNEL POWER MOSFET 40V, 53A, 10MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMFD5853NT1G
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)40 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs24 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1225 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power - Max [Max]3.1 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs10 mOhm
Supplier Device Package8-DFN (5x6) Dual Flag (SO8FL-Dual)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

NVMFD5853NL Series

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Documents

Technical documentation and resources