NVMFD5853NL Series

Dual N−Channel Logic Level Power MOSFET 40V, 34A, 10mΩ

Catalog

Dual N−Channel Logic Level Power MOSFET 40V, 34A, 10mΩ

Part	Technology	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Power - Max [Max]	Mounting Type	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Grade	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id
ON Semiconductor NVMFD5853NT1G	MOSFET (Metal Oxide)	AEC-Q101	-55 °C	175 ░C	8-DFN (5x6) Dual Flag (SO8FL-Dual)	24 nC	8-PowerTDFN	3.1 W	Surface Mount	2 N-Channel (Dual)	Logic Level Gate	40 V	Automotive	12 A	10 mOhm	1225 pF	4 V
ON Semiconductor NVMFD5853NLWFT1G	MOSFET (Metal Oxide)	AEC-Q101	-55 °C	175 ░C	8-DFN (5x6) Dual Flag (SO8FL-Dual)	23 nC	8-PowerTDFN	3 W	Surface Mount	2 N-Channel (Dual)	Logic Level Gate	40 V	Automotive	12 A	10 mOhm	1100 pF	2.4 V

Catalog

Dual N−Channel Logic Level Power MOSFET 40V, 34A, 10mΩ

Key Features

• Small Footprint (5x6 mm) for Compact Designs

• Low rDS(on)to Minimize Conduction Loss

• Low Capacitance to Minimize Driver Losses

• NVMFD5853NLWF − Wettable Flanks Option for Enhanced Optical Inspection

• AEC−Q101 Qualified and PPAP Capable

Description

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.