Discrete Semiconductor Products

SIHG32N50D-E3

LTB

MOSFET N-CH 500V 30A TO247AC

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Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 30A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	SIHG32N50D-E3

Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	96 nC
Input Capacitance (Ciss) (Max)	2550 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247AC
Power Dissipation (Max)	390 W
Rds On (Max)	150 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

Part	Package Name	Vgs (Max)	Technology	FET Type	Mounting Type	Vgs(th) (Max)	Package / Case	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SIHG32N50D-E3	TO-247AC	30 V	MOSFET (Metal Oxide)	N-Channel	Through Hole	5 V	TO-247-3	96 nC	10 V	500 V	2550 pF	390 W	150 mOhm	30 A	-55 °C	150 °C
Vishay Dale SIHG32N50D-GE3	TO-247AC	30 V	MOSFET (Metal Oxide)	N-Channel	Through Hole	5 V	TO-247-3	96 nC	10 V	500 V	2550 pF	390 W	150 mOhm	30 A	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 2.44	1m+
	Tube	500	$ 3.06	1m+

3D models and CAD resources for this part

General part information

N-Channel 500 V 30A (Tc) 390W (Tc) Through Hole TO-247AC

Technical documentation and resources