SIHG32 Series

Catalog

MOSFET N-CH 500V 30A TO247AC

Part	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)
Vishay General Semiconductor - Diodes Division SIHG32N50D-E3	MOSFET (Metal Oxide)	96 nC	-55 °C	150 °C	390 W	TO-247AC	500 V	2550 pF	5 V	TO-247-3	N-Channel	10 V	30 A	Through Hole	150 mOhm	30 V
Vishay General Semiconductor - Diodes Division SIHG32N50D-GE3	MOSFET (Metal Oxide)	96 nC	-55 °C	150 °C	390 W	TO-247AC	500 V	2550 pF	5 V	TO-247-3	N-Channel	10 V	30 A	Through Hole	150 mOhm	30 V