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STMICROELECTRONICS STPSC10H065DLF
Discrete Semiconductor Products

STPSC10065DLF

LTB
STMicroelectronics

SCHOTTKY SILICON CARBIDE DIODE 650V 10A 5-PIN POWERFLAT SURFACE MOUNT T/R

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STMICROELECTRONICS STPSC10H065DLF
Discrete Semiconductor Products

STPSC10065DLF

LTB
STMicroelectronics

SCHOTTKY SILICON CARBIDE DIODE 650V 10A 5-PIN POWERFLAT SURFACE MOUNT T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationSTPSC10065DLF
Capacitance @ Vr, F670 pF
Current - Average Rectified (Io)10 A
Current - Reverse Leakage @ Vr130 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-40 °C
Reverse Recovery Time (trr)0 ns
Speed500 mA
Supplier Device PackagePowerFlat™ (8x8) HV
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]650 V
Voltage - Forward (Vf) (Max) @ If [Max]1.45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 224$ 4.15
NewarkEach (Supplied on Cut Tape) 1$ 5.00
10$ 3.69
25$ 3.51
50$ 3.33
100$ 3.15
250$ 3.14
500$ 2.76
1000$ 2.65

Description

General part information

STPSC10065DLF Series

This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Qualified in low profile package, the STPSC10065DLF in PowerFLAT 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains.