
STPSC10065DLF
LTBSCHOTTKY SILICON CARBIDE DIODE 650V 10A 5-PIN POWERFLAT SURFACE MOUNT T/R
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STPSC10065DLF
LTBSCHOTTKY SILICON CARBIDE DIODE 650V 10A 5-PIN POWERFLAT SURFACE MOUNT T/R
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Technical Specifications
Parameters and characteristics for this part
| Specification | STPSC10065DLF |
|---|---|
| Capacitance @ Vr, F | 670 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 130 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 1.45 V |
Pricing
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Description
General part information
STPSC10065DLF Series
This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Qualified in low profile package, the STPSC10065DLF in PowerFLAT 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains.
Documents
Technical documentation and resources