Discrete Semiconductor Products

SQM60N20-35_GE3

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MOSFET N-CH 200V 60A TO263

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Discrete Semiconductor Products

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MOSFET N-CH 200V 60A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SQM60N20-35_GE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	135 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	5850 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	375 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	35 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology
Vishay General Semiconductor - Diodes Division SQM60N20-35_GE3	375 W	3.5 V	10 V	135 nC	AEC-Q101	TO-263 (D2PAK)	Surface Mount	35 mOhm	N-Channel	60 A	200 V	-55 °C	175 ░C	Automotive	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5850 pF	MOSFET (Metal Oxide)

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General part information

N-Channel 200 V 60A (Tc) 375W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources