SQM60 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 200V 60A TO263
| Part | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Qualification | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs [Max] | FET Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Grade | Vgs (Max) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 375 W | 3.5 V | 10 V | 135 nC | AEC-Q101 | TO-263 (D2PAK) | Surface Mount | 35 mOhm | N-Channel | 60 A | 200 V | -55 °C | 175 ░C | Automotive | 20 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 5850 pF | MOSFET (Metal Oxide) |