SCT027W65G3-4AG
ActiveAUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 650 V, 29 MOHM TYP., 60 A IN AN HIP247-4 PACKAGE
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SCT027W65G3-4AG
ActiveAUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 650 V, 29 MOHM TYP., 60 A IN AN HIP247-4 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | SCT027W65G3-4AG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V, 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 51 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1229 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 °C |
| Operating Temperature [Min] | -55 ░C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) [Max] | 313 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 39.3 mOhm |
| Supplier Device Package | TO-247-4 |
| Vgs (Max) [Max] | 22 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 4.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCT027W65G3-4AG Series
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Documents
Technical documentation and resources