Discrete Semiconductor Products
STP3LN80K5
ActiveSTMicroelectronics
N-CHANNEL 800 V, 2.75 OHM TYP., 2 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE
Discrete Semiconductor Products
STP3LN80K5
ActiveSTMicroelectronics
N-CHANNEL 800 V, 2.75 OHM TYP., 2 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STP3LN80K5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2.63 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 45 W |
| Rds On (Max) @ Id, Vgs | 3.25 Ohm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 838 | $ 1.96 | |
| Tube | 1 | $ 1.85 | ||
| 50 | $ 0.88 | |||
| 100 | $ 0.84 | |||
| 500 | $ 0.67 | |||
| 1000 | $ 0.61 | |||
| 2000 | $ 0.56 | |||
| 5000 | $ 0.51 | |||
| 10000 | $ 0.51 | |||
Description
General part information
STP3LN80 Series
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Documents
Technical documentation and resources