Discrete Semiconductor Products

RND030N20TL

LTB

MOSFET, N-CH, 200V, 3A, TO-252

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Discrete Semiconductor Products

LTB

MOSFET, N-CH, 200V, 3A, TO-252

Technical Specifications

Parameters and characteristics for this part

Specification	RND030N20TL

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	270 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	20 W
Power Dissipation (Max)	850 mW
Rds On (Max) @ Id, Vgs [Max]	870 mOhm
Supplier Device Package	CPT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Technology	Power Dissipation (Max)	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C
Rohm Semiconductor RND030N20TL	MOSFET (Metal Oxide)	20 W	850 mW	DPAK (2 Leads + Tab) SC-63 TO-252-3	6.7 nC	150 °C	870 mOhm	Surface Mount	30 V	200 V	CPT3	270 pF	N-Channel	10 V	3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 200 V 3A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3

Technical documentation and resources

No documents available