RND030 Series
Manufacturer: Rohm Semiconductor
MOSFET, N-CH, 200V, 3A, TO-252
| Part | Technology | Power Dissipation (Max) | Power Dissipation (Max) | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature | Rds On (Max) @ Id, Vgs [Max] | Mounting Type | Vgs (Max) | Drain to Source Voltage (Vdss) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | MOSFET (Metal Oxide) | 20 W | 850 mW | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 6.7 nC | 150 °C | 870 mOhm | Surface Mount | 30 V | 200 V | CPT3 | 270 pF | N-Channel | 10 V | 3 A |