
Discrete Semiconductor Products
NSVF3007SG3T1G
ObsoleteON Semiconductor
RF TRANSISTOR FOR LOW NOISE AMPLIFIER
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Discrete Semiconductor Products
NSVF3007SG3T1G
ObsoleteON Semiconductor
RF TRANSISTOR FOR LOW NOISE AMPLIFIER
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NSVF3007SG3T1G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 30 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 60 |
| Frequency - Transition | 8 GHz |
| Gain | 12 dBi |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Noise Figure (dB Typ @ f) | 1.8 dB |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Power - Max [Max] | 350 mW |
| Qualification | AEC-Q101 |
| Supplier Device Package | SC-70FL/MCPH3 |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NSVF3007SG3 Series
This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications.
Documents
Technical documentation and resources