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ONSEMI MMBZ18VALT1G.
Discrete Semiconductor Products

MMBD301LT3G

Active
ON Semiconductor

RF SCHOTTKY DIODE, BARRIER, SINGLE, 30 V, 450 MV, 0.9 PF, SOT-23

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ONSEMI MMBZ18VALT1G.
Discrete Semiconductor Products

MMBD301LT3G

Active
ON Semiconductor

RF SCHOTTKY DIODE, BARRIER, SINGLE, 30 V, 450 MV, 0.9 PF, SOT-23

Technical Specifications

Parameters and characteristics for this part

SpecificationMMBD301LT3G
Capacitance @ Vr, F1.5 pF
Diode TypeSchottky - Single
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]200 mW
Supplier Device PackageSOT-23-3 (TO-236)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.18
10$ 0.15
25$ 0.12
100$ 0.08
250$ 0.06
500$ 0.05
1000$ 0.04
2500$ 0.03
5000$ 0.03
Digi-Reel® 1$ 0.18
10$ 0.15
25$ 0.12
100$ 0.08
250$ 0.06
500$ 0.05
1000$ 0.04
2500$ 0.03
5000$ 0.03
Tape & Reel (TR) 10000$ 0.02
NewarkEach (Supplied on Full Reel) 6000$ 0.04
18000$ 0.03
30000$ 0.03
ON SemiconductorN/A 1$ 0.02

Description

General part information

MMBD301L Series

The Schottky diode is designed primarily for high efficiency UHF and VHF detector applications. It is readily adaptable to many other fast switching RF and digital applications. It is supplied in an inexpensive plastic package for lowhigh-volume consumer and industrial/commercial requirements. It is available in a Surface Mount package.