MMBD301L Series

200 mA, 30 V, Schottky Diode UHF

Catalog

200 mA, 30 V, Schottky Diode UHF

Part	Diode Type	Capacitance @ Vr, F	Package / Case	Supplier Device Package	Power Dissipation (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor MMBD301LT3G	Schottky - Single	1.5 pF	SC-59 SOT-23-3 TO-236-3	SOT-23-3 (TO-236)	200 mW	125 ¯C	-55 °C
ON Semiconductor MMBD301LT1G	Schottky - Single	1.5 pF	SC-59 SOT-23-3 TO-236-3	SOT-23-3 (TO-236)	200 mW	125 ¯C	-55 °C
ON Semiconductor MMBD301LT1	Schottky - Single	1.5 pF	SC-59 SOT-23-3 TO-236-3	SOT-23-3 (TO-236)	200 mW	125 ¯C	-55 °C
ON Semiconductor 1H85-MMBD3070

Catalog

200 mA, 30 V, Schottky Diode UHF

Key Features

• Extremely Low Minority Carrier Lifetime - 15 ps (Typ)

• Very Low Capacitance - 1.5 pF (Max) @ VR= 15 V

• Low Reverse Leakage - IR= 13 nAdc (Typ) MBD301, MMBD301

• Pb-Free Packages are Available

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Qualified and PPAP Capable

Description

The Schottky diode is designed primarily for high efficiency UHF and VHF detector applications. It is readily adaptable to many other fast switching RF and digital applications. It is supplied in an inexpensive plastic package for lowhigh-volume consumer and industrial/commercial requirements. It is available in a Surface Mount package.