Zenode.ai Logo
Beta
ONSEMI NVTFS6H888NTAG
Discrete Semiconductor Products

NTTFS6H850NLTAG

Active
ON Semiconductor

SINGLE N−CHANNEL POWER MOSFET 80V, 108A, 8.66MΩ

Deep-Dive with AI

Search across all available documentation for this part.

ONSEMI NVTFS6H888NTAG
Discrete Semiconductor Products

NTTFS6H850NLTAG

Active
ON Semiconductor

SINGLE N−CHANNEL POWER MOSFET 80V, 108A, 8.66MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNTTFS6H850NLTAG
Current - Continuous Drain (Id) @ 25°C14.8 A, 64 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]26 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1450 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max)73 W, 3.9 W
Rds On (Max) @ Id, Vgs8.6 mOhm
Supplier Device Package8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.97
10$ 0.79
100$ 0.62
500$ 0.52
Digi-Reel® 1$ 0.97
10$ 0.79
100$ 0.62
500$ 0.52
Tape & Reel (TR) 1500$ 0.43
3000$ 0.40
7500$ 0.38
10500$ 0.36
NewarkEach (Supplied on Cut Tape) 1$ 1.00
ON SemiconductorN/A 1$ 0.33

Description

General part information

NTTFS6H880NLT Series

Commercial Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance.