Specification	NTTFS6H860NLTAG

Current - Continuous Drain (Id) @ 25°C	30 A, 8.1 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	610 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	42 W, 3.1 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NTTFS6H880NLT Series

Single N−Channel Power MOSFET 80V, 108A, 8.66mΩ

Part	Vgs (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor NTTFS6H880NLTAG	20 V	3.1 W 33 W	6.6 A	22 A	-55 °C	175 ░C	Surface Mount	431 pF	80 V	29 mOhm	8-PowerWDFN	2 V	MOSFET (Metal Oxide)	N-Channel	9 nC	4.5 V 10 V	8-WDFN (3.3x3.3)
ON Semiconductor NTTFS6H860NLTAG	20 V	3.1 W 42 W	8.1 A 30 A		-55 °C	175 ░C	Surface Mount	610 pF	80 V	20 mOhm	8-PowerWDFN	2 V	MOSFET (Metal Oxide)	N-Channel	12 nC	4.5 V 10 V	8-WDFN (3.3x3.3)
ON Semiconductor NTTFS6H850NLTAG	20 V	3.9 W 73 W	14.8 A 64 A		-55 °C	175 ░C	Surface Mount		80 V	8.6 mOhm	8-PowerWDFN	2 V	MOSFET (Metal Oxide)	N-Channel	26 nC	4.5 V 10 V	8-WDFN (3.3x3.3)	1450 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Commercial Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance.