Discrete Semiconductor Products

FQS4903TF

Obsolete

ON Semiconductor

N-CHANNEL QFET® MOSFET 500V, 0.37A, 6.2Ω

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DocumentsDatasheet Package Drawing-751EB-SOIC8

Discrete Semiconductor Products

FQS4903TF

Obsolete

ON Semiconductor

N-CHANNEL QFET® MOSFET 500V, 0.37A, 6.2Ω

Deep-Dive with AI

DocumentsDatasheet Package Drawing-751EB-SOIC8

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FQS4903TF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	370 mA
Drain to Source Voltage (Vdss)	500 V
Gate Charge (Qg) (Max) @ Vgs	8.2 nC
Input Capacitance (Ciss) (Max) @ Vds	200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	6.2 Ohm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

FQS4903 Series

N-Channel QFET® MOSFET 500V, 0.37A, 6.2Ω

Part	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Mounting Type	Configuration	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FQS4903TF	8-SOIC	3.9 mm	0.154 in	4 V	370 mA	2 W	Surface Mount	2 N-Channel (Dual)	8.2 nC	500 V	-55 °C	150 °C	6.2 Ohm	MOSFET (Metal Oxide)	8-SOIC	200 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQS4903 Series

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.