Discrete Semiconductor Products

2N6677

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POWER BJT TO-3 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

POWER BJT TO-3 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	2N6677

Current - Collector (Ic) (Max) [Max]	15 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	8
Frequency - Transition	3 MHz
Mounting Type	Through Hole
Package / Case	TO-3, TO-204AA
Power - Max [Max]	175 W
Supplier Device Package	TO-204AA (TO-3)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	350 V

Part	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Mounting Type	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Package / Case	Power - Max [Max]
Microchip Technology 2N6677	100 µA	8	350 V	15 A	NPN	Through Hole	3 MHz	1.5 V	TO-204AA (TO-3)	TO-204AA TO-3	175 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 127.93
Newark	Each	100	$ 127.93
		500	$ 123.01

General part information

Bipolar (BJT) Transistor NPN 350 V 15 A 3MHz 175 W Through Hole TO-204AA (TO-3)

Technical documentation and resources