Discrete Semiconductor Products

NTF5P03T3G

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POWER MOSFET, P CHANNEL, 30 V, 5.2 A, 0.1 OHM, SOT-223, SURFACE MOUNT

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Discrete Semiconductor Products

Active

POWER MOSFET, P CHANNEL, 30 V, 5.2 A, 0.1 OHM, SOT-223, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	NTF5P03T3G

Current - Continuous Drain (Id) @ 25°C	3.7 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.56 W
Rds On (Max) @ Id, Vgs [Max]	100 mOhm
Supplier Device Package	SOT-223 (TO-261)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Single P-Channel Power MOSFET -30V, -5A, 100mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Technology
ON Semiconductor NTF5P03T3G	950 pF	100 mOhm	4.5 V 10 V	TO-261-4 TO-261AA	38 nC	1.56 W	Surface Mount	-55 °C	150 °C	20 V	P-Channel	3.7 A	30 V	SOT-223 (TO-261)	3 V	MOSFET (Metal Oxide)

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General part information

Power MOSFET -30V -5A 100 mOhm Single P-Channel SOT-223

Technical documentation and resources