Single P-Channel Power MOSFET -30V, -5A, 100mΩ
Single P-Channel Power MOSFET -30V, -5A, 100mΩ
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | FET Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Supplier Device Package | Vgs(th) (Max) @ Id | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 950 pF | 100 mOhm | 4.5 V 10 V | TO-261-4 TO-261AA | 38 nC | 1.56 W | Surface Mount | -55 °C | 150 °C | 20 V | P-Channel | 3.7 A | 30 V | SOT-223 (TO-261) | 3 V | MOSFET (Metal Oxide) |