Discrete Semiconductor Products

IRFIB5N65APBF

LTB

MOSFET N-CH 650V 5.1A TO220-3

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Discrete Semiconductor Products

LTB

MOSFET N-CH 650V 5.1A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRFIB5N65APBF

Current - Continuous Drain (Id) @ 25°C	5.1 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds	1417 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs [Max]	930 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Technology	Vgs (Max)
Vishay General Semiconductor - Diodes Division IRFIB5N65APBF	N-Channel	-55 °C	150 °C	5.1 A	TO-220-3	60 W	1417 pF	Through Hole	48 nC	4 V	650 V	10 V	930 mOhm	TO-220-3 Full Pack Isolated Tab	MOSFET (Metal Oxide)	30 V
Vishay General Semiconductor - Diodes Division IRFIB5N65A	N-Channel	-55 °C	150 °C	5.1 A	TO-220-3	60 W	1417 pF	Through Hole	48 nC	4 V	650 V	10 V	930 mOhm	TO-220-3 Full Pack Isolated Tab	MOSFET (Metal Oxide)	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 5.1A (Tc) 60W (Tc) Through Hole TO-220-3

Technical documentation and resources