IRFIB5 Series

Catalog

MOSFET N-CH 650V 5.1A TO220-3

Part	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Technology	Vgs (Max)
Vishay General Semiconductor - Diodes Division IRFIB5N65APBF	N-Channel	-55 °C	150 °C	5.1 A	TO-220-3	60 W	1417 pF	Through Hole	48 nC	4 V	650 V	10 V	930 mOhm	TO-220-3 Full Pack Isolated Tab	MOSFET (Metal Oxide)	30 V
Vishay General Semiconductor - Diodes Division IRFIB5N65A	N-Channel	-55 °C	150 °C	5.1 A	TO-220-3	60 W	1417 pF	Through Hole	48 nC	4 V	650 V	10 V	930 mOhm	TO-220-3 Full Pack Isolated Tab	MOSFET (Metal Oxide)	30 V