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LMH9126RRLEVM
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LMH9126RRLEVM

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LMH9126RRLEVM
Development Boards, Kits, Programmers

LMH9126RRLEVM

Active
Texas Instruments

EVM FOR LMH9126IRRL

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Technical Specifications

Parameters and characteristics for this part

SpecificationLMH9126RRLEVM
For Use With/Related ProductsLMH9126
Frequency [Max]2.9 GHz
Frequency [Min]2.3 GHz
Supplied ContentsBoard(s)
TypeAmplifier

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBox 1$ 118.80

Description

General part information

LMH9126 Series

The LMH9126 is high-performance, single-channel, differential input to single-ended output transmit RF gain block amplifier supporting 2.6-GHz center frequency band. The device is well suited to support requirements for the next generation 5G AAS or small cell applications while driving the input of a power amplifier (PA). The RF amplifier provides 18-dB typical gain with good linearity performance of 35-dBm output IP3, while maintaining less than 4-dB noise figure across the whole 1-dB bandwidth. The device is internally matched for 100-Ω differential input impedance providing easy interface with an RF-sampling or Zero-IF analog front-end (AFE) at the input. Also, the device is internally matched for 50-Ω single-ended output impedance required for easy interface with a post-amplifier, SAW filter, or PA.

Operating on a single 3.3-V supply, the device consumes only 375 mW of active power making it suitable for high-density 5G massive MIMO applications. Also, the device is available in a space saving 2-mm × 2-mm, 12-pin QFN package. The device is rated for an operating temperature of up to 105°C to provide a robust system design. There is a 1.8-V JEDEC compliant power down pin available for fast power down and power up of the device suitable for time division duplex (TDD) systems.

The LMH9126 is high-performance, single-channel, differential input to single-ended output transmit RF gain block amplifier supporting 2.6-GHz center frequency band. The device is well suited to support requirements for the next generation 5G AAS or small cell applications while driving the input of a power amplifier (PA). The RF amplifier provides 18-dB typical gain with good linearity performance of 35-dBm output IP3, while maintaining less than 4-dB noise figure across the whole 1-dB bandwidth. The device is internally matched for 100-Ω differential input impedance providing easy interface with an RF-sampling or Zero-IF analog front-end (AFE) at the input. Also, the device is internally matched for 50-Ω single-ended output impedance required for easy interface with a post-amplifier, SAW filter, or PA.

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Technical documentation and resources