Discrete Semiconductor Products

GT50J121(Q)

Obsolete

IGBT 600V 50A 240W TO3P LH

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Discrete Semiconductor Products

Obsolete

IGBT 600V 50A 240W TO3P LH

Technical Specifications

Parameters and characteristics for this part

Specification	GT50J121(Q)

Current - Collector (Ic) (Max) [Max]	50 A
Current - Collector Pulsed (Icm)	100 A
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-3PL
Power - Max [Max]	240 W
Supplier Device Package	TO-3P(LH)
Switching Energy	1.3 mJ, 1.34 mJ
Td (on/off) @ 25°C [custom]	90 ns
Td (on/off) @ 25°C [custom]	300 ns
Test Condition	15 V, 13 Ohm, 300 V, 50 A
Vce(on) (Max) @ Vge, Ic	2.45 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Power - Max [Max]	Current - Collector Pulsed (Icm)	Test Condition	Operating Temperature	Mounting Type	Switching Energy	Vce(on) (Max) @ Vge, Ic	Package / Case	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
Toshiba Semiconductor and Storage GT50J121(Q)	240 W	100 A	13 Ohm 15 V 50 A 300 V	150 °C	Through Hole	1.3 mJ 1.34 mJ	2.45 V	TO-3PL	90 ns	300 ns	TO-3P(LH)	50 A	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

IGBT 600 V 50 A 240 W Through Hole TO-3P(LH)

Technical documentation and resources

No documents available