GT50J121 Series
Manufacturer: Toshiba Semiconductor and Storage
IGBT 600V 50A 240W TO3P LH
| Part | Power - Max [Max] | Current - Collector Pulsed (Icm) | Test Condition | Operating Temperature | Mounting Type | Switching Energy | Vce(on) (Max) @ Vge, Ic | Package / Case | Td (on/off) @ 25°C [custom] | Td (on/off) @ 25°C [custom] | Supplier Device Package | Current - Collector (Ic) (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 240 W | 100 A | 13 Ohm 15 V 50 A 300 V | 150 °C | Through Hole | 1.3 mJ 1.34 mJ | 2.45 V | TO-3PL | 90 ns | 300 ns | TO-3P(LH) | 50 A | 600 V |