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PowerPAK 1212-8 Single
Discrete Semiconductor Products

SIS4604DN-T1-GE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET, N-CH, 60V, 44.4A, POWERPAK 1212 ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsDatasheetTechnical Data Sheet EN+1
PowerPAK 1212-8 Single
Discrete Semiconductor Products

SIS4604DN-T1-GE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET, N-CH, 60V, 44.4A, POWERPAK 1212 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheetTechnical Data Sheet EN+1

Technical Specifications

Parameters and characteristics for this part

SpecificationSIS4604DN-T1-GE3
Current - Continuous Drain (Id) @ 25°C44.4 A, 14.6 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]22 nC
Input Capacitance (Ciss) (Max) @ Vds960 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® 1212-8
Power Dissipation (Max)33.7 W, 3.6 W
Rds On (Max) @ Id, Vgs9.5 mOhm
Supplier Device PackagePowerPAK® 1212-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.37
10$ 0.86
100$ 0.57
500$ 0.45
1000$ 0.41
Digi-Reel® 1$ 1.37
10$ 0.86
100$ 0.57
500$ 0.45
1000$ 0.41
Tape & Reel (TR) 3000$ 0.35
6000$ 0.33
9000$ 0.31
15000$ 0.31
NewarkEach (Supplied on Cut Tape) 1$ 1.47
10$ 0.99
25$ 0.90
50$ 0.81
100$ 0.72
250$ 0.66
500$ 0.60
1000$ 0.56

Description

General part information

SIS4604 Series

N-Channel 60 V 14.6A (Ta), 44.4A (Tc) 3.6W (Ta), 33.7W (Tc) Surface Mount PowerPAK® 1212-8