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PowerPAK 1212-8 Single
Discrete Semiconductor Products

SIS4604LDN-T1-GE3

Active
Vishay General Semiconductor - Diodes Division

N-CHANNEL 60 V (D-S) MOSFET POWE

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PowerPAK 1212-8 Single
Discrete Semiconductor Products

SIS4604LDN-T1-GE3

Active
Vishay General Semiconductor - Diodes Division

N-CHANNEL 60 V (D-S) MOSFET POWE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSIS4604LDN-T1-GE3
Current - Continuous Drain (Id) @ 25°C45.9 A, 15.1 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]28 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® 1212-8
Power Dissipation (Max)33.7 W, 3.6 W
Rds On (Max) @ Id, Vgs8.9 mOhm
Supplier Device PackagePowerPAK® 1212-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.89
10$ 0.73
100$ 0.57
500$ 0.48
1000$ 0.39
Digi-Reel® 1$ 0.89
10$ 0.73
100$ 0.57
500$ 0.48
1000$ 0.39
Tape & Reel (TR) 3000$ 0.37
6000$ 0.35
9000$ 0.34

Description

General part information

SIS4604 Series

N-Channel 60 V 15.1A (Ta), 45.9A (Tc) 3.6W (Ta), 33.7W (Tc) Surface Mount PowerPAK® 1212-8

Documents

Technical documentation and resources