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TO-18
Discrete Semiconductor Products

JANTXV2N720A

Active
Microchip Technology

POWER BJT TO-18 ROHS COMPLIANT: YES

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TO-18
Discrete Semiconductor Products

JANTXV2N720A

Active
Microchip Technology

POWER BJT TO-18 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV2N720A
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
GradeMilitary
Mounting TypeThrough Hole
Package / CaseTO-18-3 Metal Can, TO-206AA
Power - Max [Max]1.8 W
QualificationMIL-PRF-19500/182
Supplier Device PackageTO-18
Supplier Device PackageTO-206AA
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic5 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 18.93
Microchip DirectN/A 1$ 20.38
NewarkEach 100$ 18.93
500$ 18.20

Description

General part information

JANTXV2N720A-Transistor Series

This specification covers the performance requirements for NPN silicon, low-power , 2N720A, 2N1893 and 2N1893S transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/182, two levels of product assurance are provided for die (JANHC and JANKC). Radiation hardness assurance (RHA) level designators "M", "D", "P", "L", "R", "F’, "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

Documents

Technical documentation and resources