Discrete Semiconductor Products
STGP8M120DF3
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP, 1200 V, 8 A LOW LOSS M SERIES IGBT IN A TO-220 PACKAGE
Discrete Semiconductor Products
STGP8M120DF3
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP, 1200 V, 8 A LOW LOSS M SERIES IGBT IN A TO-220 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STGP8M120DF3 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 16 A |
| Current - Collector Pulsed (Icm) | 32 A |
| Gate Charge | 32 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Reverse Recovery Time (trr) | 103 ns |
| Supplier Device Package | TO-220 |
| Switching Energy | 370 µJ, 390 µJ |
| Td (on/off) @ 25°C [custom] | 20 ns |
| Td (on/off) @ 25°C [custom] | 126 ns |
| Test Condition | 8 A, 33 Ohm, 600 V, 15 V |
| Vce(on) (Max) @ Vge, Ic [Max] | 2.3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 1.95 | |
| Tube | 1000 | $ 2.39 | ||
Description
General part information
STGP8 Series
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
