Discrete Semiconductor Products

APT17F100S

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FREDFET MOS8 1000 V 17 A TO-268 2 TO-268 TUBE ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

FREDFET MOS8 1000 V 17 A TO-268 2 TO-268 TUBE ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	APT17F100S

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4845 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max)	625 W
Rds On (Max) @ Id, Vgs	780 mOhm
Supplier Device Package	D3PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs
Microchip Technology APT17F100S	30 V	17 A	-55 °C	150 °C	N-Channel	4845 pF	D3PAK	780 mOhm	10 V	Surface Mount	625 W	1000 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	MOSFET (Metal Oxide)	150 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Fast switching with low EMI

Low trr for high reliability

Ultra low Crss for improved noise immunity

Technical documentation and resources