Discrete Semiconductor Products
STFW3N170
ActiveSTMicroelectronics
N-CHANNEL 1700 V, 7 OHM TYP., 2.6 A, POWERMESH POWER MOSFET IN TO-3PF PACKAGE
Discrete Semiconductor Products
STFW3N170
ActiveSTMicroelectronics
N-CHANNEL 1700 V, 7 OHM TYP., 2.6 A, POWERMESH POWER MOSFET IN TO-3PF PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STFW3N170 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.6 A |
| Drain to Source Voltage (Vdss) | 1700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 44 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-3P-3 Full Pack |
| Power Dissipation (Max) | 63 W |
| Rds On (Max) @ Id, Vgs [Max] | 13 Ohm |
| Supplier Device Package | TO-3PF |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STFW3N170 Series
This Power MOSFET is designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
Documents
Technical documentation and resources