Discrete Semiconductor Products

TP65H035G4WS

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GALLIUM NITRIDE (GAN) TRANSISTOR, 650 V, 46 A, 0.041 OHM, 22 NC, TO-247, THROUGH HOLE

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Discrete Semiconductor Products

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GALLIUM NITRIDE (GAN) TRANSISTOR, 650 V, 46 A, 0.041 OHM, 22 NC, TO-247, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	TP65H035G4WS

Current - Continuous Drain (Id) @ 25°C	46.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 C
Package / Case	TO-247-3
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs	41 mOhm
Supplier Device Package	TO-247-3
Technology	GaNFET (Cascode Gallium Nitride FET)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.8 V

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]
Renesas Electronics Corporation TP65H035G4WS	22 nC	N-Channel	41 mOhm	46.5 A	4.8 V	Through Hole	TO-247-3	-55 C	150 °C	650 V	156 W	10 V	20 V	TO-247-3	GaNFET (Cascode Gallium Nitride FET)	1500 pF
Renesas Electronics Corporation TP65H035G4WS	22 nC	N-Channel	41 mOhm	46.5 A	4.8 V	Through Hole	TO-247-3	-55 C	150 °C	650 V	156 W	10 V	20 V	TO-247-3	GaNFET (Cascode Gallium Nitride FET)	1500 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 46.5A (Tc) 156W (Tc) Through Hole TO-247-3

Technical documentation and resources