TP65H035 Series

Catalog

GALLIUM NITRIDE (GAN) TRANSISTOR, 650 V, 46 A, 0.041 OHM, 22 NC, TO-247, THROUGH HOLE

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]
Renesas Electronics Corporation TP65H035G4WS	22 nC	N-Channel	41 mOhm	46.5 A	4.8 V	Through Hole	TO-247-3	-55 C	150 °C	650 V	156 W	10 V	20 V	TO-247-3	GaNFET (Cascode Gallium Nitride FET)	1500 pF
Renesas Electronics Corporation TP65H035G4WS	22 nC	N-Channel	41 mOhm	46.5 A	4.8 V	Through Hole	TO-247-3	-55 C	150 °C	650 V	156 W	10 V	20 V	TO-247-3	GaNFET (Cascode Gallium Nitride FET)	1500 pF