Discrete Semiconductor Products
STS8DN6LF6AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE DUAL N-CHANNEL 60 V, 21 MOHM TYP., 8 A STRIPFET F6 POWER MOSFET IN A SO-8 PACKAGE
Discrete Semiconductor Products
STS8DN6LF6AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE DUAL N-CHANNEL 60 V, 21 MOHM TYP., 8 A STRIPFET F6 POWER MOSFET IN A SO-8 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STS8DN6LF6AG |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 8 A |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1340 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power - Max [Max] | 3.2 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 24 mOhm |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STS8DN6LF6AG Series
This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.
Documents
Technical documentation and resources