Specification	FDP86363-F085

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	300 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.8 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDP86363_F085 Series

N-Channel PowerTrench® 80V, 110A, 2.8mΩ

Part	Qualification	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Grade	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type
ON Semiconductor FDP86363-F085	AEC-Q101	80 V	2.8 mOhm	4 V	TO-220-3	Automotive	10 V	300 W	150 nC	Through Hole	-55 °C	175 ░C	20 V	TO-220-3	MOSFET (Metal Oxide)	110 A	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel PowerTrench®80 V, 110 A, 2.8 mΩ

Technical documentation and resources