FDP86363_F085 Series

N-Channel PowerTrench® 80V, 110A, 2.8mΩ

Catalog

N-Channel PowerTrench® 80V, 110A, 2.8mΩ

Part	Qualification	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Grade	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type
ON Semiconductor FDP86363-F085	AEC-Q101	80 V	2.8 mOhm	4 V	TO-220-3	Automotive	10 V	300 W	150 nC	Through Hole	-55 °C	175 ░C	20 V	TO-220-3	MOSFET (Metal Oxide)	110 A	N-Channel

N-Channel PowerTrench® 80V, 110A, 2.8mΩ

• Typical RDS(on)= 2.4 mΩ at VGS= 10V, ID= 80 A

• Typical Qg(tot)= 131 nC at VGS= 10V, ID= 80 A

• UIS Capability

• RoHS Compliant

• Qualified to AEC Q101

N-Channel PowerTrench®80 V, 110 A, 2.8 mΩ