Discrete Semiconductor Products

IRFP450

Obsolete

MOSFET N-CH 500V 14A TO247-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 500V 14A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRFP450

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	90 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2000 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	190 W
Rds On (Max) @ Id, Vgs [Max]	380 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Supplier Device Package	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics IRFP450	MOSFET (Metal Oxide)	190 W	90 nC	30 V	TO-247-3	N-Channel	Through Hole	380 mOhm	500 V	2000 pF	14 A	TO-247-3	4 V	150 °C	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 14A (Tc) 190W (Tc) Through Hole TO-247-3

Technical documentation and resources