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Discrete Semiconductor Products
RF2L16080CF2
LTBSTMicroelectronics
80 W, 28 V, 1.3 TO 1.7 GHZ RF POWER LDMOS TRANSISTOR
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DocumentsDS13222
Discrete Semiconductor Products
RF2L16080CF2
LTBSTMicroelectronics
80 W, 28 V, 1.3 TO 1.7 GHZ RF POWER LDMOS TRANSISTOR
Deep-Dive with AI
DocumentsDS13222
Technical Specifications
Parameters and characteristics for this part
| Specification | RF2L16080CF2 |
|---|---|
| Current Rating (Amps) | 1 µA |
| Frequency [Max] | 1.7 GHz |
| Frequency [Min] | 1.3 GHz |
| Gain | 18 dBi |
| Mounting Type | Surface Mount |
| Package / Case | 2L-FLG |
| Power - Output | 80 W |
| Supplier Device Package | A2 |
| Voltage - Rated | 65 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 160 | $ 64.16 | |
Description
General part information
RF2L16080CF2 Series
The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, designed for global positioning system and communication/ISM applications with frequencies from 1300 to 1700 MHz. It can be used in class AB, B or C for all typical modulation formats.
Documents
Technical documentation and resources