No image
Discrete Semiconductor Products
RF2L16080CF2
LTBSTMicroelectronics
RF MOSFET TRANSISTORS 80 W, 28 V, 1.3 TO 1.7 GHZ RF POWER LDMOS TRANSISTOR
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDS13222
Discrete Semiconductor Products
RF2L16080CF2
LTBSTMicroelectronics
RF MOSFET TRANSISTORS 80 W, 28 V, 1.3 TO 1.7 GHZ RF POWER LDMOS TRANSISTOR
Deep-Dive with AI
DocumentsDS13222
Technical Specifications
Parameters and characteristics for this part
| Specification | RF2L16080CF2 |
|---|---|
| Current Rating (Amps) | 1 µA |
| Frequency [Max] | 1.7 GHz |
| Frequency [Min] | 1.3 GHz |
| Gain | 18 dBi |
| Mounting Type | Surface Mount |
| Package / Case | 2L-FLG |
| Power - Output | 80 W |
| Supplier Device Package | A2 |
| Voltage - Rated | 65 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RF2L16080 Series
The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, designed for global positioning system and communication/ISM applications with frequencies from 1300 to 1700 MHz. It can be used in class AB, B or C for all typical modulation formats.
Documents
Technical documentation and resources