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8-MSOP Exp Pad Pkg
Integrated Circuits (ICs)

EMB1412MYE/NOPB

Active
Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

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Search across all available documentation for this part.

DocumentsExternal Gate Resistor Selection Guide (Rev. A)EMB1412 MOSFET Gate Driver datasheet (Rev. B)+1
8-MSOP Exp Pad Pkg
Integrated Circuits (ICs)

EMB1412MYE/NOPB

Active
Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

Deep-Dive with AI

DocumentsExternal Gate Resistor Selection Guide (Rev. A)EMB1412 MOSFET Gate Driver datasheet (Rev. B)+1

Technical Specifications

Parameters and characteristics for this part

SpecificationEMB1412MYE/NOPB
Channel TypeSingle
Current - Peak Output (Source, Sink) [custom]3 A
Current - Peak Output (Source, Sink) [custom]7 A
Driven ConfigurationLow-Side
Input TypeNon-Inverting, Inverting
Logic Voltage - VIL, VIH [custom]2.3 V
Logic Voltage - VIL, VIH [custom]0.8 V
Mounting TypeSurface Mount
Number of Drivers1
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-40 °C
Package / Case8-PowerTSSOP, 8-MSOP
Package / Case [custom]3 mm
Package / Case [custom]0.118 in
Rise / Fall Time (Typ) [custom]12 ns
Rise / Fall Time (Typ) [custom]14 ns
Supplier Device Package8-HVSSOP
Voltage - Supply [Max]14 V
Voltage - Supply [Min]3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyDigi-Reel® 1$ 6.12
Tape & Reel (TR) 250$ 4.37
500$ 3.98
1250$ 3.47
2500$ 3.34
Texas InstrumentsSMALL T&R 1$ 5.14
100$ 4.50
250$ 3.16
1000$ 2.54

Description

General part information

EMB1412 Series

The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.