Catalog
MOSFET gate driver
Key Features
• Compound CMOS and Bipolar Outputs ReduceOutput Current Variation7 A Sink/3 A Source CurrentFast Propagation Times (25 ns Typical)Fast Rise and Fall Times (14 ns/12 ns RiseFall with 2 nF Load)Inverting and Non-Inverting Inputs ProvideEither Configuration with a Single DeviceSupply Rail Under-Voltage Lockout ProtectionDedicated Input Ground (IN_REF) for SplitSupply or Single Supply OperationThermally Enhanced 8-Pin VSSOP PackageOutput Swings from VCCto VEEWhich canbe Negative Relative to Input GroundCompound CMOS and Bipolar Outputs ReduceOutput Current Variation7 A Sink/3 A Source CurrentFast Propagation Times (25 ns Typical)Fast Rise and Fall Times (14 ns/12 ns RiseFall with 2 nF Load)Inverting and Non-Inverting Inputs ProvideEither Configuration with a Single DeviceSupply Rail Under-Voltage Lockout ProtectionDedicated Input Ground (IN_REF) for SplitSupply or Single Supply OperationThermally Enhanced 8-Pin VSSOP PackageOutput Swings from VCCto VEEWhich canbe Negative Relative to Input Ground
Description
AI
The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
