Specification	STW3N150

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	1500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	29.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	939 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	140 W
Rds On (Max) @ Id, Vgs	9 Ohm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STW3N150 Series

N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH power MOSFET in TO-247 package

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max) [Max]	Operating Temperature	Vgs (Max)	Supplier Device Package
STMicroelectronics STW3N150	TO-247-3	29.3 nC	Through Hole	939 pF	N-Channel	5 V	9 Ohm	2.5 A	10 V	1500 V	MOSFET (Metal Oxide)	140 W	150 °C	30 V	TO-247-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	555	$ 5.28
Newark	Each	1	$ 7.04
		10	$ 5.74
		25	$ 4.43
		50	$ 4.19
		100	$ 3.94
		250	$ 3.59

Description

General part information

STW3N150 Series

These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.