Discrete Semiconductor Products

NJX1675PDR2G

Obsolete

DUAL COMPLEMENTARY BIPOLAR TRANSISTORS 3.0 A, 30 V

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Discrete Semiconductor Products

Obsolete

DUAL COMPLEMENTARY BIPOLAR TRANSISTORS 3.0 A, 30 V

Technical Specifications

Parameters and characteristics for this part

Specification	NJX1675PDR2G

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	180 hFE
Frequency - Transition	100 MHz, 120 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Supplier Device Package	8-SOIC
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	115 mV
Vce Saturation (Max) @ Ib, Ic	170 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Dual Complementary Bipolar Transistors 3.0 A, 30 V

Part	Package / Case	Package / Case [y]	Package / Case [x]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]
ON Semiconductor NJX1675PDR2G	8-SOIC	3.9 mm	0.154 in	1 NPN 1 PNP	30 V	100 MHz 120 MHz	180 hFE	115 mV	170 mV	3 A	Surface Mount	100 nA	8-SOIC	-55 °C	150 °C	2 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

Technical documentation and resources