Dual Complementary Bipolar Transistors 3.0 A, 30 V
Dual Complementary Bipolar Transistors 3.0 A, 30 V
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Transistor Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Frequency - Transition | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Vce Saturation (Max) @ Ib, Ic | Current - Collector (Ic) (Max) [Max] | Mounting Type | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 8-SOIC | 3.9 mm | 0.154 in | 1 NPN 1 PNP | 30 V | 100 MHz 120 MHz | 180 hFE | 115 mV | 170 mV | 3 A | Surface Mount | 100 nA | 8-SOIC | -55 °C | 150 °C | 2 W |