Discrete Semiconductor Products

SI5935CDC-T1-GE3

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MOSFET 2P-CH 20V 4A 1206-8

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Discrete Semiconductor Products

Active

MOSFET 2P-CH 20V 4A 1206-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI5935CDC-T1-GE3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	455 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	3.1 W
Rds On (Max) @ Id, Vgs [Max]	100 mOhm
Supplier Device Package	1206-8 ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Power - Max [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI5935DC-T1-E3	1.1 W	Surface Mount	20 V	-55 °C	150 °C	Logic Level Gate	1206-8 ChipFET™	1 V	8.5 nC	2 P-Channel	3 A	MOSFET (Metal Oxide)	86 mOhm
Vishay General Semiconductor - Diodes Division SI5935CDC-T1-GE3	3.1 W	Surface Mount	20 V	-55 °C	150 °C		1206-8 ChipFET™	1 V	11 nC	2 P-Channel	4 A	MOSFET (Metal Oxide)		100 mOhm	455 pF

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General part information

Mosfet Array 20V 4A 3.1W Surface Mount 1206-8 ChipFET™

Technical documentation and resources